MHW8222 Datasheet | NXP Semiconductors

feature ion- implanted, arsenic emitter transistors and an all gold metallization system. - Specified for 128- Channel Performance - Broadband Power Gain - @ f = 40- 860 MHz Gp = 22.3 d B Typ @ 860 MHz - Broadband Noise Figure NF = 6.4 d B Typ - Superior Gain, Return Loss and DC Current Stability with Temperature - All Gold Metallization Order this document by MHW8222/D 22 d B GAIN 860 MHz 128 CHANNEL CATV AMPLIFIER ABSOLUTE MAXIMUM RATINGS Rating DC Supply Voltage RF Input Voltage (Single Tone) Operating Case Temperature Range Storage Temperature Range Symbol VCC Vin TC Tstg CASE 714Y- 03, STYLE 1 Value +28 +70 - 20 to +100 - 40 to +100 Unit Vdc d Bm V °C °C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) Characteristic Symbol Min Typ Max Frequency Range - 860 Power Gain f = 50 MHz f = 860 MHz Gp 20.8 21.5 22.2 21.8 22.3 24 Unit MHz d B Slope (f = 40- 860 MHz) Gain Flatness (Peak To Valley) Input/Output Return Loss @ f = 40 MHz Derate Return Loss @ f > 40 MHz posite Second Order (Vout = +38 d Bm V/ch; 128 Channels) Cross Modulation Distortion (Vout = +38 d Bm V/ch, 128- Channel @ Fm = 55.25 MHz) posite Triple Beat (Vout = +38 d Bm V/ch, 128- Channels, Worst Case) Noise Figure (f = 40- 860 MHz) f = 50 MHz f = 860...