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MJ410 - 5 AMPERE POWER TRANSISTOR

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ410/D High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8 Vdc @ IC = 1.