Datasheet Details
| Part number | MJ410 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.55 KB |
| Description | NPN Transistor |
| Datasheet | MJ410-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJ410 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.55 KB |
| Description | NPN Transistor |
| Datasheet | MJ410-INCHANGE.pdf |
|
|
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·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER UNIT VALUE VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.75 UNIT ℃/W MJ410 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ410 | 5 AMPERE POWER TRANSISTOR | Motorola |
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MJ410 | SILICON POWER TRANSISTOR | SavantIC |
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MJ410 | NPN POWER TRANSISTOR | Digitron |
| Part Number | Description |
|---|---|
| MJ411 | NPN Transistor |
| MJ413 | NPN Transistor |
| MJ4034 | NPN Transistor |
| MJ423 | NPN Transistor |
| MJ4502 | PNP Transistor |