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MCC
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• • •
omponents 21201 Itasca Street Chatsworth !"# $
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MJ413 MJ423 MJ431
High Collector-Emitter Voltage VCES=400V DC Current Gain Specified 3.5A High Frequency Response to 2.5 MHz
10 Amp NPN Silicon Power Transistors 125W
TO-3
E A N C
0D[LPXP5DWLQJV
• • •
Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance: 1.0 /W junction to case
:
Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current
Symbol VCEX VCB VEB IC
Max 400 400 5.0 10 2.0 125 1.0
Unit Vdc Vdc
U
D
K
Vdc Adc Adc Watts W/
H
V 2 1
L
G
B
Total Device Dissipation @TC=25 Derate above 25
:
:
IB PD
:
Q
PIN 1.
MJ413 Datasheet
