MJ413 Overview
Description
With TO-3 package - High voltage APPLICATIONS - Designed for medium-to-high voltage Inverters,converters,regulators and switching circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION MJ413 Fig.1 simplified outline (TO-3) and symbol Collector SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 400 325 5 10 2 125 -65~150 -65~200 UNIT V V V A A W SYMBOL Rth j-c PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCE=400V; VEB(off)=1.5V TC=125 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V;f=1.0MHz 20 15 2.5 MIN 325 MJ413 SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICEX IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 0.8 1.25 0.25 0.5 5.0 80 V V mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJ413 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3.
