MJ413 Datasheet and Specifications PDF

The MJ413 is a 10 AMPERE POWER TRANSISTORS.

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Part NumberMJ413 Datasheet
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ413/D High-Voltage NPN Silicon Transistors . . . designed for medium–to–high voltage inverters, converters, regulators and switching c. ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ.
Part NumberMJ413 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min.) ·DC Current Gain- : hFE= 20-80@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC. pecified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA ICBO Collector Cutoff Current VCB= 400V; IE= 0,TC=125℃ IEBO Emi.
Part NumberMJ413 Datasheet
Description10 Amp NPN Silicon Power Transistors
ManufacturerMicro Commercial Components
Overview MCC )HDWXUHV • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MJ413 MJ423 MJ431  High Collector-Emitter Voltage VCES=400V D. .187 .131 MAX REF 1.050 .335 .043 0.70 BSC BSC .480 BSC .830 .165 BSC .188 MIN 39.37
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*6.35 0.97 1.40 10.92 5.46 11.18 16.89
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*3.84 30.15 3.33 MM MAX REF 26.67 8.51 1.09 1.77 BSC BSC 12.19 BSC 21.08 4.19 BSC 4.77 NOTE ∅ 150 50 100 Temperature °C Power Dissipation (W) - Versus - Temperature °C .
Part NumberMJ413 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3 package ·High voltage APPLICATIONS ·Designed for medium-to-high voltage Inverters,converters,regulators and switching circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter . Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCE=400V; VEB(off)=1.5V TC=125 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=1A ; .