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MJE13002 - 1.5 AMPERE NPN SILICON POWER TRANSISTORS

Key Features

  • Reverse Biased SOA with Inductive Loads @ TC = 100_C.
  • Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C . . . tc @ 1 A, 100_C is 290 ns (Typ).
  • 700 V Blocking Capability.
  • SOA and Switching.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MJE13003 1.5 AMPERE NPN SILICON POWER TRANSISTORS
MJE13005 4 AMPERE NPN SILICON POWER TRANSISTOR
MJE13007 POWER TRANSISTOR
MJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR
MJE1320 POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13002/D Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: • Reverse Biased SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C . . . tc @ 1 A, 100_C is 290 ns (Typ). • 700 V Blocking Capability • SOA and Switching Applications Information. ™ Data Sheet MJE13002 * MJE13003 * *Motorola Preferred Device 1.