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MJE13009 Datasheet High Voltage Fast-switching NPN Power Transistor

Manufacturer: STMicroelectronics

Overview: ® MJE13009 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s HIGH VOLTAGE CAPABILITY s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s LOW BASE-DRIVE REQUIREMENTS s VERY HIGH.

General Description

The MJE13009 is a high voltage Multiepitaxial Mesa NPN transistor mounted in Jedec TO-220 plastic package.

It uses a Hollow Emitter structure to enhance switching speeds.

3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCEV VEBO IC ICM IB IBM IE IEM Ptot Tstg Tj Parameter Collector-Emitter Voltage (IB = 0) Collector-Emitter Voltage (VBE = -1.5 V) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp ≤ 10 ms) Base Current Base Peak Current (tp ≤ 10 ms) Emitter Current Emitter Peak Current Total Power Dissipation at Tc ≤ 25 oC Storage Temperature Max.

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