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MJE18604 - POWER TRANSISTORS

Features

  • Low Base Drive Requirement.
  • High DC Current Gain (30 Typical) @ IC = 400 mA.
  • Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread.
  • Integrated Collector.
  • Emitter Free Wheeling Diode Matched with the Power Transistor.
  • Fully Characterized and Guaranteed Dynamic VCE(sat).
  • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads POWER.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18604D2/D MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for 1600 V Applications The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no more a need to guarantee an hfe window.
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