MJE18604D2 Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18604D2/D MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for 1600 V Applications The MJE18604D2 is state of art High Speed High gain BIPolar transistor (H2BIP). Tight dynamic characteristics and lot to lot low spread (±150 ns on...
MJE18604D2 Key Features
- Low Base Drive Requirement
- High DC Current Gain (30 Typical) @ IC = 400 mA
- Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimize
- Integrated Collector-Emitter Free Wheeling Diode Matched with the Power Transistor
- Fully Characterized and Guaranteed Dynamic VCE(sat)
- Continuous
- Peak (1) Base Current
- Continuous Base Current
- Peak (1)