MJE18604D2
MJE18604D2 is POWER TRANSISTORS manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for 1600 V Applications
The MJE18604D2 is state- of- art High Speed High gain BIPolar transistor (H2BIP). Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no more a need to guarantee an hfe window. Main Features
:
- Low Base Drive Requirement
- High DC Current Gain (30 Typical) @ IC = 400 mA
- Extremely Low Storage Time Min/Max Guarantees Due...
