MJE18604D2 Overview
Key Features
- Low Base Drive Requirement
- High DC Current Gain (30 Typical) @ IC = 400 mA
- Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread
- Integrated Collector–Emitter Free Wheeling Diode Matched with the Power Transistor
- Fully Characterized and Guaranteed Dynamic VCE(sat)
