Datasheet4U Logo Datasheet4U.com

MJE18604D2 Datasheet Power Transistors

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18604D2/D MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for 1600 V Applications The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no more a need to guarantee an hfe window.

Key Features

  • Low Base Drive Requirement.
  • High DC Current Gain (30 Typical) @ IC = 400 mA.
  • Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread.
  • Integrated Collector.
  • Emitter Free Wheeling Diode Matched with the Power Transistor.
  • Fully Characterized and Guaranteed Dynamic VCE(sat).
  • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads POWER.

MJE18604D2 Distributor & Price

Compare MJE18604D2 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MJE18604 POWER TRANSISTORS
MJE18002 POWER TRANSISTOR
MJE18002D2 POWER TRANSISTORS
MJE18004 POWER TRANSISTOR
MJE18004D2 POWER TRANSISTORS
MJE18006 POWER TRANSISTOR
MJE18008 POWER TRANSISTOR
MJE18009 POWER TRANSISTORS
MJE181 3 AMPERE POWER TRANSISTORS
MJE182 3 AMPERE POWER TRANSISTORS