The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE4342/D
High-Voltage Ċ High Power Transistors
. . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage — NPN PNP VCEO(sus) = 140 Vdc — MJE4342 MJE4352 VCEO(sus) = 160 Vdc — MJE4343 MJE4353 • High DC Current Gain — @ IC = 8.0 Adc hFE = 35 (Typ) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 8.
MJE4342 Datasheet
