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MM5415 - TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous @Total Device Dissipation T/ = 25°C Derate above 25°C Total Power Dissipation (a Tc = 50°C Linear Derating Factor Operating and Storage Junction Temperature Range Symbol MM5415 MM5416 v CEO VCBO VEBO •b "C PD 200 300 200 350 4.0 7.0 0.5 1.0 1.0 6.7 Pd TJ- Tstg 10 0.057 - 65 to + 200 Unit Vdc Vdc Vdc Adc Adc Watt W/°C Watts mW/°C , MM5415 MM5416 CASE 79-02, STYLE 1 TO-39 (TO-205AD) TRANSISTOR PNP SILICON Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R&jc RflJA Max 17.5 150 Unit °C/W °c/w I Refer to 2N5415 for graphs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.