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MMBR521LT1 - HIGH-FREQUENCY TRANSISTOR PNP SILICON

Key Features

  • 68 73 73 73 72 69 65 60 54 47 39 31 22 62 41 40 44 49 53 64 69 68 63 56 47 38 28 58 48 53 58 61 63 66 66 64 59 52 44 36 28 |S22| 0.818 0.549 0.472 0.452 0.449 0.451 0.480 0.466 0.483 0.493 0.500 0.502 0.503 0.507 0.694 0.417 0.358 0.346 0.347 0.352 0.382 0.371 0.391 0.408 0.421 0.431 0.442 0.455 0.441 0.260 0.239 0.242 0.248 0.255 0.293 0.289 0.315 0.337 0.356 0.373 0.391 0.409 0.848 0.598 0.518 0.496 0.489 0.492 0.514 0.500 0.516 0.523 0.529 0.528 0.524 0.523 0.738 0.465 0.404 0.388 0.387 0.389.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR521LT1/D The RF Line PNP Silicon High-Frequency Transistor Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. • High Current Gain–Bandwidth Product — fT = 3.4 GHz (Typ) @ IC = – 35 mAdc (MMBR521LT1) fT = 4.2 GHz (Typ) @ IC = – 50 mAdc (MRF5211LT1) • Low Noise Figure @ f = 1.0 GHz — NF(matched) = 2.5 dB (Typ) (MMBR521LT1) NF(matched) = 2.