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MMBT6427 - DARLINGTON TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO VEBO 'C THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, T"a = 25°C Derate above 25°C PD Storage Temperature Tstg •Thermal Resistance Junction to Ambient RflUA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 40 40 12 500 Max 350 2.8 150 357 Unit Vdc Vdc Vdc mAdc Unit mW mW/°C °C °C/W MMBT6427 CASE 318-02/03, STYLE 6 SOT-23 (TOr236AA/AB) DARLINGTON TRANSISTOR NPN SILICON Refer to 2N6426 for graphs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.