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MMBT6428,29
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB) AMPLIFIER TRANSISTOR
NPN SILICON
Refer to MPSA18 for graphs.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol v CEO v CBO VEBO
ic
Value
MMBT6428 MMBT6429
50 45 60 55
6.0 200
Unit Vdc Vdc Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, Ta = 25°C Derate above 25°C
Symbol PD
Storage Temperature
Tstg
Thermal Resistance Junction to Ambient
R ftJA
'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Max
350 2.8 150 357
Unit
mW
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Bl = 0) dC = 1.
MMBT6429 Datasheet
