Datasheet4U Logo Datasheet4U.com

MMCFD914 - FLIP-CHIP SWITCHING DIODE

Features

  • Breakdown Voltage - V(BR) == 100V (Min).
  • Forward Current - to 225 mAde.
  • Reverse Recovery time - trr";; 5.0 ns.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MMC0310 (MM Series) Cylindrical General Purpose Surface Mount Power Resistor IRC
MMC124A Angle module / instantaneous acceleration MiraMEMS
MMC127A Angle module / instantaneous acceleration MiraMEMS
MMC2001 M-CORE Reference Manual Freescale Semiconductor
MMC2112 M CORE Microcontrollers Motorola Inc

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MMCF2221 FLIP-CHIP NPN SWITCH AND AMPLIFIER TRANSISTORS
MMCF2221A FLIP-CHIP NPN SWITCH AND AMPLIFIER TRANSISTORS
MMCF2222 FLIP-CHIP NPN SWITCH AND AMPLIFIER TRANSISTORS
MMCF2222A FLIP-CHIP NPN SWITCH AND AMPLIFIER TRANSISTORS
MMCF2369 FLIP-CHIP NPN SWITCH AND AMPLIFIER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MMCFD914 FLIP-CHIP SWITCHING DIODE • Flip-Chip diode for high·speed switching applications with performance similar to the 1N9l4. Primary Electrical Features: • Breakdown Voltage - V(BR) == 100V (Min) • Forward Current - to 225 mAde • Reverse Recovery time - trr";; 5.0 ns MAXIMUM RATINGS Rating Reverse Voltage Forward Current Forward Surge Current Symbol VR IF IF(surge) Value 100 225 500 Unit Vde mAde mAde ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Breakdown Voltage (I (BR) == 10 /-LAde) V(BR) 100 - Vde Reverse Current (VR == 20 Vde) IR - 50 nAde Forward Volt~ge (IF = 10 mAde) VF - 1.0 Vde Capacitance (VR == 0) C - 5.0 pF Reverse Recovery Time (I F = 10 mAde, VR == 6.0 Vde, irr == 1.0 mAde) trr - 5.
Published: |