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MMDF2N05ZR2 - Dual MOSFET

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Features

  • lieved readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 250 VDS = 0 V Ciss VGS = 0 V TJ = 25°C 200 C,.

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Datasheet Details

Part number MMDF2N05ZR2
Manufacturer Motorola
File Size 191.89 KB
Description Dual MOSFET
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2N05ZR2/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF2N05ZR2 Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate EZFETs™ are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process and contain monolithic back–to–back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time.
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