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MMDF3207 - Dual MOSFET

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  • tanda, Shinagawa.
  • ku, Tokyo 141, Japan. 81.
  • 3.
  • 5487.
  • 8488 4 ◊ MMDF3207/D Motorola TMOS Power MOSFET Transistor Device Data.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF3207/D Product Preview Medium Power Surface Mount Products MMDF3207 Motorola Preferred Device TMOS Dual P...

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Surface Mount Products MMDF3207 Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors ™ DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS RDS(on) = 33 mW WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

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