MMDF4C03HD Datasheet Dual MOSFET

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF4C03HD/D Advance Information Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an.

Datasheet Details

Part number	MMDF4C03HD
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	275.70 KB
Description	Dual MOSFET
Datasheet	MMDF4C03HD_MotorolaInc.pdf

Key Features

e data is difficult to use for calculating rise and fall because drain.
gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fal.

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