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MMDF4N01HD - Dual MOSFET

Features

  • ircuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2000 VDS = 0 V Ciss VGS = 0 V TJ = 25°C 1600 C,.

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Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF4N01HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF4N01HD Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
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