MMFT1N10E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT1N10E/D Medium Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS E FETt SOT 223 for Surface Mount This advanced E FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and mutation modes. This new energy efficient device also offers a drain to source diode with a fast recovery time. Designed for...