| Part number | MMFT1N10E |
|---|---|
| Datasheet | MMFT1N10E_MotorolaInc.pdf |
| File Size | 236.41 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | MEDIUM POWER MOSFET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT1N10E/D Medium Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS E FETt SOT 223 for Surface Mount This advanced E FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and mutation modes. This new energy efficient device also offers a drain to source diode with a fast recovery time. Designed for...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MMFT107T1 | MEDIUM POWER MOSFET |
| MMFT108T1 | N-channel MOSFET |
| MMFT2406T1 | MEDIUM POWER MOSFET |
| MMFT2955E | MEDIUM POWER MOSFET |
| MMFT2N02EL | MEDIUM POWER MOSFET |
| MMFT2N25E | Power MOSFET |
| MMFT3055E | MEDIUM POWER MOSFET |
| MMFT3055EL | MEDIUM POWER MOSFET |
| MMFT3055V | Power MOSFET |
| MMFT3055VL | POWER FET |
