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MMJT9410 - Bipolar Power Transistors

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMJT9410/D Preliminary Data Sheet NPN Silicon • High DC Current Gain — hFE = 85 (Min) @ IC = 1.0 Adc = 60 (Min) @ IC = 3.0 Adc Bipolar Power Transistors • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc MMJT9410 Motorola Preferred Device POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.2 VOLTS • Low Collector –Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 5.
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