| Part Number | MMJT9410 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MMJT9410
Preferred Device
Bipolar Power Transistors
NPN Silicon
Features
• Collector −Emitter Sustaining Voltage − • High DC Current Gain − • • • • •
VCEO(sus) = 30 Vdc (Min) @ .
* Collector *Emitter Sustaining Voltage * * High DC Current Gain * * * * * * VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc hFE = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc Low Collector *Emitter Saturation Voltage * VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc = 0.45 Vdc (Max) @ IC =. |
MMJT9410 Datasheet and Specifications PDF
The MMJT9410 is a Bipolar Power Transistors NPN Silicon.
Key Specifications
| Package | SOT-223 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | MMJT9410 Datasheet |
|---|---|
| Description | Bipolar Power Transistors |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMJT9410/D Preliminary Data Sheet NPN Silicon • High DC Current Gain — hFE = 85 (Min) @ IC = 1.0 Adc = 60 (Min) @ IC = 3.0 Adc Bipolar . ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |