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MMJT9435 - Bipolar Power Transistors

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMJT9435/D Preliminary Data Sheet PNP Silicon • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc Bipolar Power Transistors • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc MMJT9435 Motorola Preferred Device POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.275 VOLTS • Low Collector –Emitter Saturation Voltage — VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.68 Vdc (Max) @ IC = 5.
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