| Part Number | MMJT9435 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MMJT9435
Preferred Device
Bipolar Power Transistors
PNP Silicon
Features
• Pb−Free Packages are Available • Collector −Emitter Sustaining Voltage − • • • • •
VCEO(sus) = 30 Vdc .
* Pb *Free Packages are Available * Collector *Emitter Sustaining Voltage * * * * * * VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain * = 125 (Min) @ IC = 0.8 Adc hFE = 90 (Min) @ IC = 3.0 Adc Low Collector *Emitter Saturation Voltage * VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 V. |
MMJT9435 Datasheet and Specifications PDF
The MMJT9435 is a Bipolar Power Transistors PNP Silicon.
Key Specifications
| Package | TO-261-4 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | MMJT9435 Datasheet |
|---|---|
| Description | Bipolar Power Transistors |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMJT9435/D Preliminary Data Sheet PNP Silicon • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc Bipola. ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ. |