Full PDF Text Transcription for MPF930 (Reference)
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MPF930. For precise diagrams, and layout, please refer to the original PDF.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPF930/D TMOS Switching N–Channel — Enhancement 2 GATE 3 DRAIN MPF930 MPF960 MPF990 1 SOURCE MAXIMUM RATINGS ...
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ancement 2 GATE 3 DRAIN MPF930 MPF960 MPF990 1 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Drain – Gate Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Symbol VDS VDG VGS VGSM ID IDM PD 1.0 8.0 TJ, Tstg θJA – 55 to 150 125 Watts mW/°C °C °C/W MPF930 35 35 MPF960 60 60 ± 20 ± 40 2.0 3.
MPF930 Datasheet
