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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPF930/D
TMOS Switching
N–Channel — Enhancement
2 GATE
3 DRAIN
MPF930 MPF960 MPF990
1 SOURCE
MAXIMUM RATINGS
Rating Drain – Source Voltage Drain – Gate Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Symbol VDS VDG VGS VGSM ID IDM PD 1.0 8.0 TJ, Tstg θJA – 55 to 150 125 Watts mW/°C °C °C/W MPF930 35 35 MPF960 60 60 ± 20 ± 40 2.0 3.
MPF960 Datasheet
