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MPSA70 - Amplifier Transistor

Key Features

  • 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70.
  • 6.35.
  • 2.04 2.66.
  • 2.54 2.93.
  • 3.43.
  • A R P.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA70/D Amplifier Transistor PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MPSA70 MAXIMUM RATINGS Rating Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VEBO IC PD PD TJ, Tstg Value –40 –4.0 –100 625 5.0 1.5 12 Unit Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) www.DataSheet4U.com – 55 to +150 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.