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MPSA75, MPSA77
Darlington Transistors
PNP Silicon
Features
• These are Pb--Free Devices*
MAXIMUM RATINGS
Rating Collector--Emitter Voltage
MPSA75 MPSA77
Symbol VCES
Value --40 --60
Unit Vdc
Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC PD
--10 --500 625 5.0
Vdc mAdc mW mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg --55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction--to--Ambient RθJA
200 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
MPSA75 Datasheet
