Datasheet Summary
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF148/D
The RF MOSFET Line RF Power Field-Effect Transistor N- Channel Enhancement- Mode
Designed for power amplifier applications in industrial, mercial and amateur radio equipment to 175 MHz.
- Superior High Order IMD
- Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Power Gain = 18 dB (Typ) Efficiency = 40% (Typ)
- IMD(d3) (30 W PEP)
- - 35 dB (Typ)
- IMD(d11) (30 W PEP)
- - 60 dB (Typ)
- 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
30 W, to 175 MHz N- CHANNEL MOS LINEAR RF POWER FET
G S CASE 211- 07, STYLE 2
MAXIMUM RATINGS
Rating Drain- Source...
