MRF150 Datasheet | Motorola Semiconductor

( Data Sheet : .. ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF150/D The RF MOSFET Line RF Power Field-Effect Transistor N- Channel Enhancement- Mode Designed primarily for linear large- signal output stages up to 150 MHz frequency range. - Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 d B (Typ) Efficiency = 45% (Typ) - Superior High Order IMD - IMD(d3) (150 W PEP) - - 32 d B (Typ) - IMD(d11) (150 W PEP) - - 60 d B (Typ) - 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR 150 W, to 150 MHz N- CHANNEL MOS LINEAR RF POWER FET G S CASE 211- 11, STYLE 2 MAXIMUM RATINGS Rating Drain- Source Voltage Drain- Gate Voltage Gate- Source Voltage Drain Current - Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ± 40 16 300 1.71 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W Handling and Packaging - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. .. REV 8 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 .. MRF150 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain- Source Breakdown Voltage (VGS = 0, ID = 100 m A) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) Gate- Body Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 125 - - - - - - 5.0 1.0 Vdc m Adc µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 100 m A) Drain- Source On- Voltage (VGS = 10 V, ID = 10 A) Forward Transconductance (VDS = 10 V, ID = 5.0 A) VGS(th) VDS(on) gfs 1.0 1.0 4.0 3.0 3.0 7.0 5.0 5.0 - Vdc Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Output Capacitance...