MRF150
MRF150 is SILICON RF POWER MOSFET manufactured by Advanced Semiconductor.
DESCRIPTION
:
The MRF150 is an N-Channel Enhancement-Mode MOS Broadband RF Ppwer Transistor Designed for Wideband Large Signal Amplifier Applications From 2.0 to 150 MHz.
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R L
Ø.125 NOM.
MAXIMUM RATINGS
ID VDSS VGS PDISS TJ TSTG θJC
16 A 125 V ± 40 V 300 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 10 C/W
O O O O O O
DIM A B C D E F G H I J K L .980 / 24.89 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .245 / 6.22 .720 / 18.28 .125 / 3.18 MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .125 / 3.18
.230 / 5.84
.255 / 6.48 .7.30 / 18.54
.980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67
CHARACTERISTICS
SYMBOL
V(BR)DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss Gps η ψ
TC = 25 C
TEST CONDITIONS
ID = 100 m A VDSS = 50 V VGS = 20 V VDS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VDS = 0 V ID = 100 m A ID = 100 m A
MINIMUM TYPICAL MAXIMUM
125 5.0 1.0 1.0 4 350 250 50 45 17.0 50 5.0
UNITS
V m A µA V mho
VDS = 50 V
VGS = 0 V f = 1.0 MHz p F
VDD = 50 V
IDQ = 250 m A
Pout = 150 W (PEP)
Fo = 30 & 30.001 MHz VSWR = 30:1 AT ALL PHASE ANGLES d B %
NO DEGRADRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N...
