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MRF15030 - RF POWER TRANSISTOR

Key Features

  • C4 C5, C12 C6, C11 C7, C9 C8, C10 C13 L1, L2 N1, N2 Long Bead, Fair Rite Short Bead, Fair Rite 100 µF, Electrolytic Capacitor, Mallory 0.1 µF, Chip Capacitor, Kemit 1.3 pF, B Case Chip Capacitor, ATC 18 pF, B Case Chip Capacitor, ATC 1800 pF, Chip Capacitor, Kemit 0.8 to 8 pF, Variable Capacitor, Johanson 51 pF, Chip Capacitor, Murata Erie 470 µF, Electrolytic Capacitor, Mallory 3 Turn, 20 AWG, 0.126″ ID Choke Type N Flange Mount RF Connector, Omni Spectra Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15030/D The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 – 1600 MHz. • Specified 26 Volts, 1490 MHz, Class AB Characteristics: Output Power — 30 Watts Gain — 9 dB Min @ 30 Watts (PEP) Efficiency — 30% Min @ 30 Watts (PEP) Intermodulation Distortion — – 30 dBc Max @ 30 Watts (PEP) • Third Order Intercept Point — 53.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc, IC = 2.