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MRF1507 - LATERAL NCHANNEL BROADBAND RF POWER MOSFET

Key Features

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  • 176 |S21| 16.58 8.37 4.08 2.60 1.84 1.38 0.86 0.64 0.49 0.36 S21 ∠φ 98 88 76 68 61 54 44 38 33 29 |S12| 0.03 0.03 0.02 0.02 0.02 0.02 0.02 0.01 0.01 0.01 S12 ∠φ 9 1.
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  • 12 2 |S22| 0.79 0.80 0.81 0.83 0.84 0.86 0.89 0.90 0.92 0.93 S22 ∠φ.
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1507/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 520 MHz, 7.5 Volts Output Power — 8 Watts Power Gain — 10 dB Efficiency — 65% • Characterized with Series Equivalent Large–Signal D Impedance Parameters • Excellent Thermal Stability • Capable of Handling 20:1 VSWR, @ 9.