MRF1507T1 Datasheet | Motorola Semiconductor

( Data Sheet : .. ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1507/D The RF MOSFET Line RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFETs The MRF1507 is designed for broadband mercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, mon source amplifier applications in 7.5 volt portable FM equipment. - Specified Performance @ 520 MHz, 7.5 Volts Output Power - 8 Watts Power Gain - 10 d B Efficiency - 65% - Characterized with Series Equivalent Large- Signal D Impedance Parameters - Excellent Thermal Stability - Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 d B Overdrive - Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request G - RF Power Plastic Surface Mount Package - Available in Tape and Reel by Adding T1 Suffix to Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1507 MRF1507T1 8 W, 520 MHz, 7.5 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFET CASE 466- 02, STYLE 1 (PLD 1.5) MAXIMUM RATINGS Rating Drain- Source Voltage (1) Gate- Source Voltage Drain Current - Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg Tj Value 25 ± 20 4 62.5 0.50 - 65 to +150 150 Unit Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Not designed for 12.5 volt applications. Symbol RθJC Max 2 Unit °C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. .. REV 1 MOTOROLA RF DEVICE DATA © Motorola, Inc. 1998 .. MRF1507 MRF1507T1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0) Gate- Source Leakage Current (VGS = 20 Vdc, VDS = 0) ON...