MRF1500 Datasheet | Motorola Semiconductor

( Data Sheet : .. ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1500/D The RF Line Microwave Pulse Power Transistor Designed for 1025- 1150 MHz pulse mon base amplifier applications such as DME. - Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 d B Min - 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR - Hermetically Sealed Industry Package - Silicon Nitride Passivated - Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration - Internal Input Matching - Characterized with 10 µs, 1.0% Duty Cycle Pulses Motorola Preferred Device 500 W (PEAK), 1025- 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 355E- 01, STYLE 1 MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Peak (1) Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 65 65 3.5 35 1750 10 - 65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.1 Unit °C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measured @32 µs, 2.0%) Preferred devices are Motorola remended choices for future use and best overall value. REV 6 .. RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 .. MRF1500 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (IC = 60 m Adc, VBE = 0) Collector- Base Breakdown Voltage (IC = 60 m Adc, IE = 0) Emitter- Base Breakdown Voltage (IE = 10 m Adc, IC = 0)...