MRF1535FT1 Description
) Freescale Semiconductor Technical Data MRF1535T1 Rev. 7, 3/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, mon source amplifier applications in 12.5 volt mobile FM equipment.