MRF1535NT1 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF1535NT1, a member of the MRF1535FNT1 RF Power Field Effect Transistors family.

Features

Q = 250 mA Pin = 34 dBm 10 11 12 13 14 15 520 MHz 40 IDQ = 250 mA Pin = 34 dBm 10 11 12 13 14 15 VDD, SUPPLY.

Motorola

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Datasheet Details

Part number	MRF1535NT1
Manufacturer	Motorola
File Size	311.49 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF1535NT1 Datasheet
Additional preview pages of the MRF1535NT1 datasheet.

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Full PDF Text Transcription

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( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1535T1 Rev. 7, 3/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 520 MHz, 12.5 Volts Output Power — 35 Watts Power Gain — 10.0 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.

Published: Apr 19, 2006 |