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MRF1550FT1 - RF POWER FIELD EFFECT TRANSISTORS

Key Features

  • >.
  • Channel enhancement mode, Lateral Metal.
  • Oxide Semiconductor Field.
  • Effect Transistor (MOSFET). Motorola.

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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1550T1/D The RF MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 175 MHz, 12.5 Volts Output Power — 50 Watts Power Gain — 12 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.