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MRF1550T1 - RF POWER FIELD EFFECT TRANSISTORS

Download the MRF1550T1 datasheet PDF. This datasheet also covers the MRF1550FT1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • >.
  • Channel enhancement mode, Lateral Metal.
  • Oxide Semiconductor Field.
  • Effect Transistor (MOSFET). Motorola.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF1550FT1_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1550T1/D The RF MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 175 MHz, 12.5 Volts Output Power — 50 Watts Power Gain — 12 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.