Datasheet4U Logo Datasheet4U.com

MRF19030LR3 - The RF MOSFET Line RF Power Field Effect Transistors

Key Features

  • KAGE.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF19060LR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF19060LSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF19085LR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF19085LSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF19090R3 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF19030LSR3 The RF MOSFET Line RF Power Field Effect Transistors
MRF19030R3 RF POWER FIELD EFFECT TRANSISTORS
MRF19030SR3 RF POWER FIELD EFFECT TRANSISTORS
MRF19045LR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045LSR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF19030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for class AB PCN and PCS base station applications with www.datasheet4u.com frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and N - Channel Enhancement - Mode Lateral MOSFETs multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — - 47 dBc @ 30 kHz BW 1.25 MHz — - 55 dBc @ 12.5 kHz BW 2.25 MHz — - 55 dBc @ 1 MHz BW Output Power — 4.5 Watts Avg. Power Gain — 13.