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MRF19030SR3 - RF POWER FIELD EFFECT TRANSISTORS

Download the MRF19030SR3 datasheet PDF. This datasheet also covers the MRF19030R3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF19030R3_Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF19030LR3 The RF MOSFET Line RF Power Field Effect Transistors
MRF19030LSR3 The RF MOSFET Line RF Power Field Effect Transistors
MRF19030R3 RF POWER FIELD EFFECT TRANSISTORS
MRF19045LR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045LSR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with f r e quencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and www.datasheet4u.com multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — –47 dBc @ 30 kHz BW 1.25 MHz — –55 dBc @ 12.5 kHz BW 2.25 MHz — –55 dBc @ 1 MHz BW Output Power — 4.5 Watts Avg. Power Gain — 13.