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MRF19045R3 - RF POWER FIELD EFFECT TRANSISTORS

General Description

0.120″ x 0.333″ x 0.100″, Surface Mount Ferrite Beads, Fair Rite #2743019446 10 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 24 pF Chip Capacitors, B Case, ATC #100B240JP500X 470 pF Chip Capacitor, B Case, ATC #100B471JP200X

Key Features

  • -45 -50 -55 -60 η 1.0 10 100 -65 IMD,.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF19045LR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19045/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier applications. • Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi–carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9.5 Watts Avg. Power Gain — 14.9 dB Efficiency — 23.