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MRF19120S - RF POWER FIELD EFFECT TRANSISTORS

Download the MRF19120S datasheet PDF. This datasheet also covers the MRF19120 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 12.5 kHz BW, 2.25 MHz @ 1 MHz BW -40 6 2.25 MHz 885 kHz ACPR -60 4 1.25 MHz 2 0.1 1.0 10 100 -80 10 40 20 12 G ps , POWER GAIN (dB) 11 Gps 60 40 η,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF19120_Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF19120 RF POWER FIELD EFFECT TRANSISTORS
MRF19125 RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125S RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125SR3 RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19030LR3 The RF MOSFET Line RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19120/D The RF Sub–Micron MOSFET Line www.DataSheet4U.com RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs MRF19120 MRF19120S 1990 MHz, 120 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. • CDMA Performance @ 1990 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — –47 dBc @ 30 kHz BW 1.25 MHz — –55 dBc @ 12.5 kHz BW 2.25 MHz — –55 dBc @ 1 MHz BW Output Power — 15 Watts (Avg.) Power Gain — 11.