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MRF19120 - RF POWER FIELD EFFECT TRANSISTORS

Features

  • 12.5 kHz BW, 2.25 MHz @ 1 MHz BW -40 6 2.25 MHz 885 kHz ACPR -60 4 1.25 MHz 2 0.1 1.0 10 100 -80 10 40 20 12 G ps , POWER GAIN (dB) 11 Gps 60 40 η,.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF19120S RF POWER FIELD EFFECT TRANSISTORS
MRF19125 RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19120/D The RF Sub–Micron MOSFET Line www.DataSheet4U.com RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs MRF19120 MRF19120S 1990 MHz, 120 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. • CDMA Performance @ 1990 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — –47 dBc @ 30 kHz BW 1.25 MHz — –55 dBc @ 12.5 kHz BW 2.25 MHz — –55 dBc @ 1 MHz BW Output Power — 15 Watts (Avg.) Power Gain — 11.
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