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MRF20060 - RF Power Bipolar Transistors

Key Features

  • br>.
  • j5.
  • j3.
  • j0.5.
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  • j1 ee DataSh DataSheet4U. com VCC = 26 V, ICQ = 200 mA, Pout = 60 W (PEP) f MHz 1800 1850 1900 1950 2000 Zin(1) Ω 1.0 + j4.8 1.5 + j4.8 2.0 + j4.7 2.5 + j4.7 3.5 + j4.7 ZOL.
  • Ω 1.7 + j3.3 2.2 + j2.7 2.4 + j3.0 2.3 + j3.2 2.0 + j3.4 Zin(1)= Conjugate of fixture base terminal impedance. ZOL.
  • = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 13. Series Equ.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large–signal, common emitter class A and class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers.