MRF20060
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF20060/D
The RF Sub- Micron Bipolar Line
RF Power Bipolar Transistors
The MRF20060 and MRF20060S are designed for broadband mercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large- signal, mon emitter class A and class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi- carrier base station RF power amplifiers.
- Guaranteed Two- tone Performance at 2000 MHz, 26 Volts Output Power
- 60 Watts (PEP) Power Gain
- 9 d B Efficiency
- 33% Intermodulation Distortion
- - 30 d Bc
- Characterized with Series Equivalent Large- Signal Impedance Parameters
- S- Parameter Characterization at High Bias Levels
- Excellent Thermal Stability
- Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP) Output Power
- Designed for FM, TDMA, CDMA and Multi- Carrier...
