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MRF20060S - RF Power Bipolar Transistors

Download the MRF20060S datasheet PDF. This datasheet also covers the MRF20060 variant, as both devices belong to the same rf power bipolar transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

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  • j1 ee DataSh DataSheet4U. com VCC = 26 V, ICQ = 200 mA, Pout = 60 W (PEP) f MHz 1800 1850 1900 1950 2000 Zin(1) Ω 1.0 + j4.8 1.5 + j4.8 2.0 + j4.7 2.5 + j4.7 3.5 + j4.7 ZOL.
  • Ω 1.7 + j3.3 2.2 + j2.7 2.4 + j3.0 2.3 + j3.2 2.0 + j3.4 Zin(1)= Conjugate of fixture base terminal impedance. ZOL.
  • = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 13. Series Equ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF20060_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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MRF21010LR1 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF20060 RF Power Bipolar Transistors
MRF20060R RF POWER BIPOLAR TRANSISTOR
MRF20060RS RF POWER BIPOLAR TRANSISTOR
MRF20030 RF POWER TRANSISTOR
MRF207 HIGH FREQUENCY TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large–signal, common emitter class A and class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers.