MRF313 - HIGH-FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF313
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	63.27 KB
Description	HIGH-FREQUENCY TRANSISTOR
Datasheet	MRF313 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MRF313A	HIGH FREQUENCY TRANSISTOR
MRF314	RF POWER TRANSISTORS
MRF315	NPN Silicon RF Power Transistors
MRF316	BROADBAND RF POWER TRANSISTOR
MRF317	BROADBAND RF POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF313/D The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficiency = 45% Typ • Emitter Ballast and Low Current Density for Improved MTBF • Common Emitter for Improved Stability MRF313 1.0 W, 400 MHz HIGH–FREQUENCY TRANSISTOR NPN SILICON CASE 305A–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 30 40 3.0 150 6.