MRF313 - NPN SILICON RF TRANSISTOR

ASI

General Description

The MRF313 is Designed for wide band Amplifier Applications up to 400 MHz.

Key Features

PG = 15 dB min. at 1.0 W/ 400 MHz.
Common Emitter for Improved Stability.
Omnigold™ Metalization System.

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MRF313 npn silicon rf transistor by ASI - Datasheet Preview

Datasheet Details

Part number	MRF313
Manufacturer	ASI
File Size	126.31 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	MRF313 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF313 NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF313 is Designed for wide band Amplifier Applications up to 400 MHz. FEATURES: • PG = 15 dB min. at 1.0 W/ 400 MHz • Common Emitter for Improved Stability • Omnigold™ Metalization System MAXIMUM RATINGS IC 150 mA VCBO 40 V VCEO 30 V VEBO PDISS TJ TSTG θJC 3.0 V 6.1 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 28.5 OC/W PACKAGE STYLE .200" 4L PILL CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS BVCEO IC = 10 mA BVCBO IC = 0.1 mA BVEBO IE = 1.0 mA ICEO VE = 20 V hFE VCE = 10 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 30 35 3.0 1.0 20 150 UNITS V V V mA --- COB VCB = 28 V f = 1.0 MHz 3.5 5.0 pF PG ηC VCC = 28 V POUT = 1.0 W f = 400 MHz 15 16 45 dB % A D V A N C E D S E M I C O N D U C T O R, I N C.