MRF313A - HIGH FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF313A
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	45.85 KB
Description	HIGH FREQUENCY TRANSISTOR
Datasheet	MRF313A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MRF313	The RF Line NPN Silicon High-Frequency Transistor	MA-COM
MRF313	NPN SILICON RF TRANSISTOR	ASI
MRF313	HIGH-FREQUENCY TRANSISTOR	Tyco Electronics
MRF3104	(MRF3104 / MRF3105 / MRF3106) MICROWAVE LINEAR POWER TRANSISTORS	Tyco Electronics
MRF3105	(MRF3104 / MRF3105 / MRF3106) MICROWAVE LINEAR POWER TRANSISTORS	Tyco Electronics

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MRF313	HIGH-FREQUENCY TRANSISTOR
MRF314	RF POWER TRANSISTORS
MRF315	NPN Silicon RF Power Transistors
MRF316	BROADBAND RF POWER TRANSISTOR
MRF317	BROADBAND RF POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tq = 25°C Derate above 25°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol v CEO VCBO v EBO ic PD Tstg Value 30 40 3.0 150 2.5 35 -65 to +200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C Symbol Rejc Max 28.5 Unit °C/W MRF313 MRF313A MRF313 CASE 305A-01, STYLE 1 MRF313A CASE 305-1, STYLE 1 HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Ib = 0) Collector-Emitter Breakdown Voltage C(l = 5.0 mAdc, Vbe = 0) Collector-Base Breakdown Voltage (lC = 0.